BHU-UET SERIES Physics
Semiconductor Electronics Materials Devices And Simple Circuits
4 previous year questions.
Volume: 4 Ques
Yield: Medium
High-Yield Trend
1
2008 1
2007 2
2006 Chapter Questions 4 MCQs
01
PYQ 2006
medium
physics ID: bhu-uet-
Which of the following statements is true for an n-type semiconductor?
1
The donor level lies closely below the bottom of the conduction band
2
The donor level lies closely above the top of the valence band
3
The donor level lies at the halfway mark of the forbidden energy gap
4
None of the above
02
PYQ 2006
medium
physics ID: bhu-uet-
Carbon, silicon and germanium have four valence electrons each. These are characterized valence and conduction bands separated by energy band gap respectively equal to and . Which of the following statements is true?
1
2
3
4
03
PYQ 2007
medium
physics ID: bhu-uet-
Barrier potential of junction diode does not depend on
1
forward bias
2
doping density
3
diode design
4
temperature
04
PYQ 2008
medium
physics ID: bhu-uet-
A pure semiconductor behaves slightly as a conductor at
1
room temperature
2
low temperature
3
high temperature
4
Both and