CUET-PG SERIES Electronic-devices
Mosfet
1 previous year questions.
Volume: 1 Ques
Yield: Medium
High-Yield Trend
1
2023 Chapter Questions 1 MCQs
01
PYQ 2023
medium
electronic-devices ID: cuet-pg-
Which statement(s) is/are true?
A. The drain current in an enhancement-type MOSFET is inversely proportional to the relative permittivity of the gate oxide.
B. The threshold voltage in an MOS capacitor does not depend on the gate oxide thickness.
C. The drain current in an enhancement-type MOSFET is directly proportional to the relative permittivity of the gate oxide.
D. The threshold voltage in an MOS capacitor depends on the gate oxide thickness.
Choose the correct answer from the options given below.
A. The drain current in an enhancement-type MOSFET is inversely proportional to the relative permittivity of the gate oxide.
B. The threshold voltage in an MOS capacitor does not depend on the gate oxide thickness.
C. The drain current in an enhancement-type MOSFET is directly proportional to the relative permittivity of the gate oxide.
D. The threshold voltage in an MOS capacitor depends on the gate oxide thickness.
Choose the correct answer from the options given below.
1
A and B only
2
A only
3
C only
4
C and D only
About Mosfet - CUET-PG
Mosfet is a vital chapter for CUET-PG aspirants. Mastering the concepts covered in this chapter is essential for securing a top rank.
By rigorously practicing the previous year questions associated with this chapter, you can identify high-yield topics, understand the examiner's perspective, and boost your confidence during the actual exam.
Frequently Asked Questions
Why focus on Mosfet PYQs?
Analyzing PYQs for this specific chapter reveals the most frequently tested concepts and the typical complexity of questions, allowing you to tailor your study plan efficiently.
How to best use this analysis?
Review the topic breakdown to see which sub-topics within Mosfet carry the most weight. Then, tackle the questions iteratively to solidify your understanding.