CUET-PG SERIES Material-science-and-technology
Doping Effects
2 previous year questions.
Volume: 2 Ques
Yield: Medium
High-Yield Trend
2
2024 Chapter Questions 2 MCQs
01
PYQ 2024
medium
material-science-and-technology ID: cuet-pg-
The concentration of hole-electron pairs in pure silicon at 300 K is . Antimony is doped into silicon in proportions of , and half of the impurity atoms contribute electrons. The factor by which the number of charge carriers increases due to doping is:
1
1
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1
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1
4
02
PYQ 2024
medium
material-science-and-technology ID: cuet-pg-
A pure silicon crystal has . It is doped with concentration of pentavalent As. The number of holes is:
1
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3
4