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AMUEEE SERIES
Physics

Semiconductor Electronics Materials Devices And Simple Circuits

8 previous year questions.

Volume: 8 Ques
Yield: Medium

High-Yield Trend

1
2012
2
2011
3
2010
1
2009
1
2007

Chapter Questions
8 MCQs

01
PYQ 2007
medium
physics ID: amueee-2
In the depletion region of an unbiased junction diode, there are
1
only electrons
2
only holes
3
both electrons and holes
4
only fixed ions
02
PYQ 2009
medium
physics ID: amueee-2
Pure silicon at 300 K has equal electron (n ) and hole (n ) concentration of . Doping by indium increases to The in the doped silicon is
1
2
3
4
03
PYQ 2010
medium
physics ID: amueee-2
Avalanche breakdown in a - junction diode is due to
1
sudden shift of Fermi level
2
increase in the width of forbidden gap
3
sudden increase of impurity concentration
4
cumulative effect of increased electron collision and creation of added electron hole pairs
04
PYQ 2010
medium
physics ID: amueee-2
Any digital circuit can be realised by repetitive use of only
1
gate
2
gate
3
gate
4
gate
05
PYQ 2010
medium
physics ID: amueee-2
An transistor is biased to work as an amplifier. Which of the following statements is false?
1
The electrons go from base region to the collector region
2
The electrons go from the collector region to the base region
3
The electrons go from emitter region to the base region
4
The electrons go from base region to the emitter region
06
PYQ 2011
medium
physics ID: amueee-2
Which of the following truth tables corresponds to gate.
1
2
3
4
07
PYQ 2011
medium
physics ID: amueee-2
An intrinsic semiconductor has a resistivity of at room temperature. Find the intrinsic carrier concentration, if the mobilities of electrons and holes are , and respectively
1
2
3
4
08
PYQ 2012
medium
physics ID: amueee-2
In a Bipolar Junction Transistor , the current gain is defined is
1
the ratio of change in collector current to the change in emitter current for a constant collector voltage in the common base configuration
2
the ratio of change in emitter current to the change in base current for constant emitter voltage in common emitter configuration
3
the ratio of change in collector current to the change in base current for constant collector voltage in collector emitter configuration
4
the ratio of change in base current to the change in collector current for constant collector voltage in collector emitter configuration

About Semiconductor Electronics Materials Devices And Simple Circuits - AMUEEE

Semiconductor Electronics Materials Devices And Simple Circuits is a vital chapter for AMUEEE aspirants. Mastering the concepts covered in this chapter is essential for securing a top rank.

By rigorously practicing the previous year questions associated with this chapter, you can identify high-yield topics, understand the examiner's perspective, and boost your confidence during the actual exam.

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