CUET-PG SERIES Electronics-engineering
Semiconductor
3 previous year questions.
Volume: 3 Ques
Yield: Medium
High-Yield Trend
3
2025 Chapter Questions 3 MCQs
01
PYQ 2025
easy
electronics-engineering ID: cuet-pg-
Due to illumination by light, the electron and hole concentrations in a heavily doped N-type semiconductor increase by and , respectively. If is the intrinsic concentration, then
02
PYQ 2025
medium
electronics-engineering ID: cuet-pg-
At room temperature, the energy band gap of different materials have been listed in the table below. Correctly match the energy band gap (List-I) with the corresponding material (List-II).
| LIST-I (Energy band gap) | LIST-II (Material) |
|---|---|
| A. eV | I. Polymer |
| B. eV | II. Germanium |
| C. eV | III. Silicon |
| D. eV | IV. Gallium Arsenide |
1
A - IV, B - II, C - III, D - I
2
A - II, B - III, C - IV, D - I
3
A - I, B - II, C - IV, D - III
4
A - III, B - IV, C - I, D - II
03
PYQ 2025
easy
electronics-engineering ID: cuet-pg-
In a p-type Si sample, the hole concentration is and the intrinsic carrier concentration is . The value of electron concentration will be