NEET-UG SERIES Physics
P N Junction
6 previous year questions.
Volume: 6 Ques
Yield: Medium
High-Yield Trend
2
2018 1
2015 1
2014 1
2011 1
1991 Chapter Questions 6 MCQs
01
PYQ 1991
medium
physics ID: neet-ug-
The depletion layer in the p-n junction region is caused by
1
drift of holes
2
diffusion of charge carriers
3
migration of impurity ions
4
drift of electrons.
02
PYQ 2011
medium
physics ID: neet-ug-
Pure at has equal number of electron and hole concentrations of Doping by indium increases to 4.5 The doped semiconductor is of
1
p-type having electron concentration
2
n-type with electron concentration
3
p-type with electron concentration
4
n-type with electron concentration
03
PYQ 2014
medium
physics ID: neet-ug-
The barrier potential of a junction depends on (1) type of semiconductor material (2) amount of doping (3) temperature Which one of the following is correct?
1
(1) and (2) only
2
(2) only
3
(2) and (3) only
4
(1), (2) and (3)
04
PYQ 2015
medium
physics ID: neet-ug-
The input signal given to a CE amplifier having a voltage gain of 150 is The corresponding output signal will be
1
2
3
4
05
PYQ 2018
medium
physics ID: neet-ug-
In a p-n junction diode, change in temperature due to heating
1
affects only reverse resistance
2
does not affect resistance of p-n junction
3
affects only forward resistance
4
affects the overall V – I characteristics of p-n junction
06
PYQ 2018
medium
physics ID: neet-ug-
A set of ‘n’ equal resistors, of value ‘R’ each, are connected in series to a battery of emf ‘E’ and internal resistance ‘R’. The current drawn is I. Now, the ‘n’ resistors are connected in parallel to the same battery. Then the current drawn from battery becomes 10 I. The value of ‘n’ is
1
10
2
20
3
11
4
9
About P N Junction - NEET-UG
P N Junction is a vital chapter for NEET-UG aspirants. Mastering the concepts covered in this chapter is essential for securing a top rank.
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