Pn Junction
High-Yield Trend
Questions 11 MCQs
A transistor is operated in a common emitter configuration at constant collector voltage Vc = 1.5 V such that a change in the base current from 100 \mu A to 150 \mu A produces a change in the collector current from 5 mA to 10 mA. The current gain (\beta ) is:
1. 67
2. 75
3. 100
4. 50
Which of the following is an example of forward biasing?
| 1. | 2. | ||
| 3. | 4. |
| 1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
| 2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
| 4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
| 1. | 2. | zero | |
| 3. | 4. |
In the given figure, a diode is connected to an external resistance Ā and an EMF of . If the barrier potential developed across the diode is , the current in the circuit will be:
1.
2.
3.
4.
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance will be:
| 1. | 2. | ||
| 3. | 4. |
Which one of the following represents the forward bias diode?
| 1. | Ā |
| 2. | Ā |
| 3. | |
| 4. |
In a junction diode, the change in temperature due to heating:
| 1. | affects only reverse resistance. |
| 2. | affects only forward bias. |
| 3. | does not affect the resistance of the junction. |
| 4. | affects the overall characteristics of a junction. |
Out of the following which one is a forward-biased diode?
| 1. | Ā |
| 2. | |
| 3. | |
| 4. |
| 1. | both circuits and |
| 2. | circuit only |
| 3. | circuit only |
| 4. | circuit only |
| 1. | ![]() |
2. | ![]() |
| 3. | ![]() |
4. | ![]() |



