Semiconductor Electronics Materials Devices And Simple Circuits
15 previous year questions.
Volume: 15 Ques
Yield: Medium
High-Yield Trend
3
2019
3
2018
5
2017
2
2016
1
2012
1
2010
Chapter Questions
15 MCQs
01
PYQ 2010
medium
physicsID: met-2010
A transistor is working in common emitter mode. Its amplification factor ( ) is
80. If the base current is 250 , the collector current will be
1
2
3
4
Official Solution
Correct Option:
(4)
Step 1: Concept
The current amplification factor is defined as the ratio of collector current to base current. Step 2: Formula
$ $ Final Answer: (D)
02
PYQ 2012
medium
physicsID: met-2012
In intrinsic semiconductor at room temperature number of electrons and holes are
1
equal
2
zero
3
unequal
4
infinite
Official Solution
Correct Option:
(1)
At room temperature, due to thermal vibrations, the few bonds of intrinsic semiconductor are broken and producing equal number of electrons and holes in the semiconductor.
03
PYQ 2016
medium
physicsID: met-2016
The combination of gates shown in the figure below produces:
1
NOR gate
2
OR gate
3
AND gate
4
XOR gate
Official Solution
Correct Option:
(2)
Step 1: Circuit shows two NOT gates followed by a NAND gate. Step 2: (De Morgan's law). So it is OR gate.
04
PYQ 2016
medium
physicsID: met-2016
An artificial satellite moving in a circular orbit around the earth has a total (kinetic + potential) energy , its potential energy is
1
2
3
4
Official Solution
Correct Option:
(3)
Step 1: For satellite in circular orbit, (since , ). Step 2: Total energy . So (since ? Actually , so ).
05
PYQ 2017
medium
physicsID: met-2017
A - junction is designed to withstand current up to a maximum in 10 mA. A resistor is connected in series with it. When forward biased the diode has a potential drop of 0.5 V. The maximum voltage of the battery required to forward bias the diode is
1
2.5 V
2
1.5 V
3
2 V
4
10 V
Official Solution
Correct Option:
(1)
Step 1: Understanding the Concept:
Total voltage = voltage across resistor + voltage across diode. Step 2: Detailed Explanation:
V
V Step 3: Final Answer:
Maximum voltage required V.
06
PYQ 2017
medium
physicsID: met-2017
What is the Boolean equation for a NAND gate with inputs and ?}
1
2
3
4
Official Solution
Correct Option:
(4)
Step 1: Understanding the Concept:
A NAND gate produces the complement of an AND operation. Step 2: Detailed Explanation:
By definition: NAND gate output is . By De Morgan's theorem, this is equivalent to , but the Boolean equation is . Step 3: Final Answer:
Boolean equation: .
07
PYQ 2017
medium
physicsID: met-2017
When the inputs of a two input logic gate are 0 and 0, the output is 1. When the inputs are 1 and 0 the output is 0. The logic gate is of the type
1
AND
2
NAND
3
NOR
4
OR
Official Solution
Correct Option:
(3)
Step 1: Understanding the Concept:
NOR gate: output . Output is 1 only when both inputs are 0. Step 2: Detailed Explanation:
This matches NOR gate. Step 3: Final Answer:
The logic gate is NOR.
08
PYQ 2017
medium
physicsID: met-2017
If and are the current gain in the CB and CE configurations respectively of the transistor circuit, then is
1
infinite
2
1
3
2
4
0.5
Official Solution
Correct Option:
(2)
Step 1: Understanding the Concept:
Relation between (CB gain) and (CE gain): , so . Step 2: Detailed Explanation:
Step 3: Final Answer:
.
09
PYQ 2017
medium
physicsID: met-2017
The inputs and outputs for different time intervals are given below the NAND gate.
The values taken by , , , and are respectively:
1
1, 1, 1, 0
2
0, 1, 0, 1
3
0, 1, 1, 0
4
1, 0, 1, 1
Official Solution
Correct Option:
(1)
Step 1: Understanding the Concept:
For a NAND gate: Output . Output is 0 only when both inputs are 1; otherwise output is 1. Step 2: Detailed Explanation:
:
:
:
: Step 3: Final Answer:
.
10
PYQ 2018
medium
physicsID: met-2018
In the figure shown below, which of the diodes are forward biased?}
1
1,2,3
2
2,4,5
3
1,3,4
4
2,3,4
Official Solution
Correct Option:
(2)
Step 1: Understanding the Concept:
A diode is forward biased when the -side is at a higher potential than the -side. Step 2: Detailed Explanation:
Analyzing the circuit: diodes 2, 4, and 5 are forward biased. Step 3: Final Answer:
Diodes 2, 4, and 5 are forward biased.
11
PYQ 2018
medium
physicsID: met-2018
A semiconductor has an electron concentration of and hole concentration of . The semiconductor is
1
-type
2
-type
3
intrinsic semiconductor
4
- junction
Official Solution
Correct Option:
(1)
Step 1: Understanding the Concept:
In -type semiconductors, electrons are majority carriers. Step 2: Detailed Explanation:
Electron concentration ( ) is greater than hole concentration ( ). Hence, it is an -type semiconductor. Step 3: Final Answer:
The semiconductor is -type.
12
PYQ 2018
medium
physicsID: met-2018
A transistor is used in common-emitter configuration. Given its , calculate the change in collector current when the base current changes by .}
1
2
3
4
Official Solution
Correct Option:
(4)
Step 1: Understanding the Concept:
and . Step 2: Detailed Explanation:
. , so . Step 3: Final Answer:
The change in collector current is .
13
PYQ 2019
medium
physicsID: met-2019
If no external voltage is applied across p-n junction, there would be
1
no electric field across the junction
2
an electric field pointing from n-type to p-type side across the junction
3
an electric field pointing from p-type to n-type side across the junction
4
a temporary electric field during formation of p-n junction that would subsequently disappear
Official Solution
Correct Option:
(2)
Step 1: Understanding the Concept:
Built-in potential exists at p-n junction. Step 2: Detailed Explanation:
Positive charge on n-side, negative on p-side creates field from n to p. Step 3: Final Answer:
Electric field points from n-type to p-type.
14
PYQ 2019
medium
physicsID: met-2019
The dominant contribution to current comes from holes in case of
1
metals
2
intrinsic semiconductors
3
p-type extrinsic semiconductors
4
n-type extrinsic semiconductors
Official Solution
Correct Option:
(3)
Step 1: Understanding the Concept:
Holes are majority carriers in p-type semiconductors. Step 2: Detailed Explanation:
In p-type, holes are majority charge carriers and dominate current. Step 3: Final Answer:
p-type extrinsic semiconductors.
15
PYQ 2019
medium
physicsID: met-2019
The valence band and conduction band of a solid overlap at low temperature, the solid may be
1
a metal
2
a semiconductor
3
an insulator
4
None of the above
Official Solution
Correct Option:
(1)
Step 1: Understanding the Concept:
Band structure determines conductivity. Step 2: Detailed Explanation:
Overlapping bands means no energy gap, electrons flow freely metal. Step 3: Final Answer:
The solid is a metal.
About Semiconductor Electronics Materials Devices And Simple Circuits - MET
Semiconductor Electronics Materials Devices And Simple Circuits is a vital chapter for MET aspirants. Mastering the concepts covered in this chapter is essential for securing a top rank.
By rigorously practicing the previous year questions associated with this chapter, you can identify high-yield topics, understand the examiner's perspective, and boost your confidence during the actual exam.
Frequently Asked Questions
Why focus on Semiconductor Electronics Materials Devices And Simple Circuits PYQs?
Analyzing PYQs for this specific chapter reveals the most frequently tested concepts and the typical complexity of questions, allowing you to tailor your study plan efficiently.
How to best use this analysis?
Review the topic breakdown to see which sub-topics within Semiconductor Electronics Materials Devices And Simple Circuits carry the most weight. Then, tackle the questions iteratively to solidify your understanding.
