VITEEE SERIES
Physics

Semiconductors

33 previous year questions.

Volume: 33 Ques
Yield: High

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Chapter Questions
33 MCQs

01
PYQ 2006
medium
physics ID: viteee-2
When the conductivity of a semiconductor is due only to the breaking up of the covalent bonds, the semiconductor is known as:
1
Donor
2
Extrinsic
3
Intrinsic
4
Acceptor
02
PYQ 2006
medium
physics ID: viteee-2
In a P-type semiconductor, the acceptor impurity is:
1
Just above the valence band
2
Just below the conduction band
3
Just above the conduction band
4
Just below the valence band
03
PYQ 2007
medium
physics ID: viteee-2
Identify the logic gate from the following TRUTH table
1
NOR gate
2
AND gate
3
NOT gate
4
NAND gate
04
PYQ 2007
medium
physics ID: viteee-2
In Boolean algebra, is equal to
1
2
3
4

05
PYQ 2007
medium
physics ID: viteee-2
Two identical P-N junctions are connected in series in three different ways as shown below to a battery. The potential drop across the P-N junctions are equal in
1
circuits 2 and 3
2
circuits 1 and 2
3
circuits 1 and 3
4
none of the circuit
06
PYQ 2007
medium
physics ID: viteee-2
The temperature coefficient of a zener mechanism is
1
negative
2
positive
3
infinity
4
zero
07
PYQ 2007
medium
physics ID: viteee-2
A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters register the same current. If the voltage of the DC source is increased then
1
the ammeter connected to the semiconductor will register higher current than the ammeter connected to the conductor
2
the ammeter connected to the conductor will register higher current than the ammeter connected to the semiconductor
3
the ammeters connected to both semiconductor and conductor will register the same current
4
the ammeter connected to both semiconductor and conductor will register no change in the current
08
PYQ 2008
medium
physics ID: viteee-2
The reverse saturation current of p--n diode
1
depends on doping concentrations
2
depends on diffusion lengths of carriers
3
depends on the doping concentrations and diffusion lengths
4
depends on the doping concentrations, diffusion length and device temperature
09
PYQ 2008
medium
physics ID: viteee-2
In the circuit shown above, an input of 1V is fed into the inverting input of an ideal Op-amp A. The output signal will be
1
+10V
2
-10V
3
0V
4
infinity
10
PYQ 2008
medium
physics ID: viteee-2
When a solid with a band gap has a donor level just below its empty energy band, the solid is
1
an insulator
2
a conductor
3
a p-type semiconductor
4
an n-type semiconductor
11
PYQ 2008
medium
physics ID: viteee-2
A p--n junction has acceptor impurity concentration of in the p-side and donor impurity concentration of in the n-side. What is the contact potential at the junction ( thermal energy, intrinsic semiconductor concentration ) ?
1
2
3
4

12
PYQ 2008
medium
physics ID: viteee-2
A Zener diode has a contact potential of 1V in the absence of biasing. It undergoes Zener breakdown for an electric field of V/m at the depletion region of p--n junction. If the width of the depletion region is , what should be the reverse biased potential for the Zener breakdown to occur?
1
3.5 V
2
1.5 V
3
2.5 V
4
0.5 V
13
PYQ 2010
medium
physics ID: viteee-2
A potential difference of is applied between the opposite faces of a Ge crystal plate of area and thickness . If the concentration of electrons in Ge is and mobilities of electrons and holes are and , then the current flowing through the plate will be
1
0.25 A
2
0.45 A
3
0.56 A
4
0.64 A
14
PYQ 2010
medium
physics ID: viteee-2
In space charged limited region, plate current in a diode is for plate voltage . If the plate voltage is increased to , then the plate current will be
1
10 mA
2
40 mA
3
80 mA
4
160 mA
15
PYQ 2010
medium
physics ID: viteee-2
Zener diode is used for
1
producing oscillations in an oscillator
2
amplification
3
stabilisation
4
rectification
16
PYQ 2012
medium
physics ID: viteee-2
A transistor is operated in common emitter configuration at such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is
1
75
2
100
3
25
4
50
17
PYQ 2012
medium
physics ID: viteee-2
The output wave form of full-wave rectifier is
1
A
2
B
3
C
4
D
18
PYQ 2012
medium
physics ID: viteee-2
In a common emitter amplifier the input signal is applied across
1
2
3
4

19
PYQ 2012
medium
physics ID: viteee-2
For the given circuit of a p-n junction diode, which of the following is correct?
1
In forward biasing the voltage across is
2
In forward biasing the voltage across is
3
In reverse biasing the voltage across is
4
In reverse biasing the voltage across is
20
PYQ 2013
medium
physics ID: viteee-2
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are and , respectively. The electron and hole densities are each equal to . The electrical conductivity of germanium is
1
4.24 S/m
2
2.12 S/m
3
1.09 S/m
4
0.47 S/m
21
PYQ 2014
medium
physics ID: viteee-2
In a semiconductor, separation between conduction and valence band is of the order of?
1
0 eV
2
1 eV
3
10 eV
4
50 eV
22
PYQ 2014
medium
physics ID: viteee-2
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is?
1
10 mA
2
15 mA
3
20 mA
4
5 mA
23
PYQ 2014
medium
physics ID: viteee-2
The resistance of a germanium junction diode whose is shown in figure is ( )?
1
5 kΩ
2
0.2 kΩ
3
2.3 kΩ
4

24
PYQ 2014
medium
physics ID: viteee-2
The output Y of the logic circuit shown in figure is best represented as?
1
2
3
4

25
PYQ 2014
medium
physics ID: viteee-2
If we add impurity to a metal, those atoms also deflect electrons. Therefore?
1
the electrical and thermal conductivities both increase
2
the electrical and thermal conductivities both decrease
3
the electrical conductivity increases but thermal conductivity decreases
4
the electrical conductivity decreases but thermal conductivity increases
26
PYQ 2015
medium
physics ID: viteee-2
An n-type semiconductor is
1
neutral
2
positively charged
3
negatively charged
4
negatively or positively charged depending on the amount of impurity added
27
PYQ 2017
medium
physics ID: viteee-2
The combination of gates shown below yields
1
OR gate
2
XOR gate
3
AND gate
4
NOT gate
28
PYQ 2017
medium
physics ID: viteee-2
Transfer characteristics (output voltage vs input voltage ) for a base biased transistor in CE configuration is as shown in the figure. For using the transistor as a switch, it is used
1
in region (III)
2
both in region (I) and (III)
3
in region (II)
4
in region (I)
29
PYQ 2018
medium
physics ID: viteee-2
In a common emitter transistor amplifier , and internal resistance of a transistor is 500 . The voltage amplification of amplifier will be:
1
500
2
460
3
600
4
560
30
PYQ 2018
medium
physics ID: viteee-2
Consider the junction diode is ideal. The value of current flowing through AB is:
1
2
3
4

31
PYQ 2019
medium
physics ID: viteee-2
In a common base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor will be:
1
49
2
50
3
51
4
48
32
PYQ 2019
medium
physics ID: viteee-2
Which of the following gates will have an output of 1?
1
A
2
B
3
C
4
D
33
PYQ 2025
medium
physics ID: viteee-2
In a p-n junction diode, the reverse saturation current doubles for every rise in temperature of:
1
2
3
4