VITEEE SERIES
Physics

Semiconductors

33 previous year questions.

Volume: 33 Ques
Yield: High

High-Yield Trend

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2025
2
2019
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Chapter Questions
33 MCQs

01
PYQ 2006
medium
physics ID: viteee-2
When the conductivity of a semiconductor is due only to the breaking up of the covalent bonds, the semiconductor is known as:
1
Donor
2
Extrinsic
3
Intrinsic
4
Acceptor
02
PYQ 2006
medium
physics ID: viteee-2
In a P-type semiconductor, the acceptor impurity is:
1
Just above the valence band
2
Just below the conduction band
3
Just above the conduction band
4
Just below the valence band
03
PYQ 2007
medium
physics ID: viteee-2
Identify the logic gate from the following TRUTH table
1
NOR gate
2
AND gate
3
NOT gate
4
NAND gate
04
PYQ 2007
medium
physics ID: viteee-2
In Boolean algebra, is equal to
1
2
3
4

05
PYQ 2007
medium
physics ID: viteee-2
Two identical P-N junctions are connected in series in three different ways as shown below to a battery. The potential drop across the P-N junctions are equal in
1
circuits 2 and 3
2
circuits 1 and 2
3
circuits 1 and 3
4
none of the circuit
06
PYQ 2007
medium
physics ID: viteee-2
The temperature coefficient of a zener mechanism is
1
negative
2
positive
3
infinity
4
zero
07
PYQ 2007
medium
physics ID: viteee-2
A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters register the same current. If the voltage of the DC source is increased then
1
the ammeter connected to the semiconductor will register higher current than the ammeter connected to the conductor
2
the ammeter connected to the conductor will register higher current than the ammeter connected to the semiconductor
3
the ammeters connected to both semiconductor and conductor will register the same current
4
the ammeter connected to both semiconductor and conductor will register no change in the current
08
PYQ 2008
medium
physics ID: viteee-2
The reverse saturation current of p--n diode
1
depends on doping concentrations
2
depends on diffusion lengths of carriers
3
depends on the doping concentrations and diffusion lengths
4
depends on the doping concentrations, diffusion length and device temperature
09
PYQ 2008
medium
physics ID: viteee-2
In the circuit shown above, an input of 1V is fed into the inverting input of an ideal Op-amp A. The output signal will be
1
+10V
2
-10V
3
0V
4
infinity
10
PYQ 2008
medium
physics ID: viteee-2
When a solid with a band gap has a donor level just below its empty energy band, the solid is
1
an insulator
2
a conductor
3
a p-type semiconductor
4
an n-type semiconductor
11
PYQ 2008
medium
physics ID: viteee-2
A p--n junction has acceptor impurity concentration of in the p-side and donor impurity concentration of in the n-side. What is the contact potential at the junction ( thermal energy, intrinsic semiconductor concentration ) ?
1
2
3
4

12
PYQ 2008
medium
physics ID: viteee-2
A Zener diode has a contact potential of 1V in the absence of biasing. It undergoes Zener breakdown for an electric field of V/m at the depletion region of p--n junction. If the width of the depletion region is , what should be the reverse biased potential for the Zener breakdown to occur?
1
3.5 V
2
1.5 V
3
2.5 V
4
0.5 V
13
PYQ 2010
medium
physics ID: viteee-2
A potential difference of is applied between the opposite faces of a Ge crystal plate of area and thickness . If the concentration of electrons in Ge is and mobilities of electrons and holes are and , then the current flowing through the plate will be
1
0.25 A
2
0.45 A
3
0.56 A
4
0.64 A
14
PYQ 2010
medium
physics ID: viteee-2
In space charged limited region, plate current in a diode is for plate voltage . If the plate voltage is increased to , then the plate current will be
1
10 mA
2
40 mA
3
80 mA
4
160 mA
15
PYQ 2010
medium
physics ID: viteee-2
Zener diode is used for
1
producing oscillations in an oscillator
2
amplification
3
stabilisation
4
rectification
16
PYQ 2012
medium
physics ID: viteee-2
A transistor is operated in common emitter configuration at such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is
1
75
2
100
3
25
4
50
17
PYQ 2012
medium
physics ID: viteee-2
The output wave form of full-wave rectifier is
1
A
2
B
3
C
4
D
18
PYQ 2012
medium
physics ID: viteee-2
In a common emitter amplifier the input signal is applied across
1
2
3
4

19
PYQ 2012
medium
physics ID: viteee-2
For the given circuit of a p-n junction diode, which of the following is correct?
1
In forward biasing the voltage across is
2
In forward biasing the voltage across is
3
In reverse biasing the voltage across is
4
In reverse biasing the voltage across is
20
PYQ 2013
medium
physics ID: viteee-2
Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are and , respectively. The electron and hole densities are each equal to . The electrical conductivity of germanium is
1
4.24 S/m
2
2.12 S/m
3
1.09 S/m
4
0.47 S/m
21
PYQ 2014
medium
physics ID: viteee-2
In a semiconductor, separation between conduction and valence band is of the order of?
1
0 eV
2
1 eV
3
10 eV
4
50 eV
22
PYQ 2014
medium
physics ID: viteee-2
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is?
1
10 mA
2
15 mA
3
20 mA
4
5 mA
23
PYQ 2014
medium
physics ID: viteee-2
The resistance of a germanium junction diode whose is shown in figure is ( )?
1
5 kΩ
2
0.2 kΩ
3
2.3 kΩ
4

24
PYQ 2014
medium
physics ID: viteee-2
The output Y of the logic circuit shown in figure is best represented as?
1
2
3
4

25
PYQ 2014
medium
physics ID: viteee-2
If we add impurity to a metal, those atoms also deflect electrons. Therefore?
1
the electrical and thermal conductivities both increase
2
the electrical and thermal conductivities both decrease
3
the electrical conductivity increases but thermal conductivity decreases
4
the electrical conductivity decreases but thermal conductivity increases
26
PYQ 2015
medium
physics ID: viteee-2
An n-type semiconductor is
1
neutral
2
positively charged
3
negatively charged
4
negatively or positively charged depending on the amount of impurity added
27
PYQ 2017
medium
physics ID: viteee-2
The combination of gates shown below yields
1
OR gate
2
XOR gate
3
AND gate
4
NOT gate
28
PYQ 2017
medium
physics ID: viteee-2
Transfer characteristics (output voltage vs input voltage ) for a base biased transistor in CE configuration is as shown in the figure. For using the transistor as a switch, it is used
1
in region (III)
2
both in region (I) and (III)
3
in region (II)
4
in region (I)
29
PYQ 2018
medium
physics ID: viteee-2
In a common emitter transistor amplifier , and internal resistance of a transistor is 500 . The voltage amplification of amplifier will be:
1
500
2
460
3
600
4
560
30
PYQ 2018
medium
physics ID: viteee-2
Consider the junction diode is ideal. The value of current flowing through AB is:
1
2
3
4

31
PYQ 2019
medium
physics ID: viteee-2
In a common base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor will be:
1
49
2
50
3
51
4
48
32
PYQ 2019
medium
physics ID: viteee-2
Which of the following gates will have an output of 1?
1
A
2
B
3
C
4
D
33
PYQ 2025
medium
physics ID: viteee-2
In a p-n junction diode, the reverse saturation current doubles for every rise in temperature of:
1
2
3
4

About Semiconductors - VITEEE

Semiconductors is a vital chapter for VITEEE aspirants. Mastering the concepts covered in this chapter is essential for securing a top rank.

By rigorously practicing the previous year questions associated with this chapter, you can identify high-yield topics, understand the examiner's perspective, and boost your confidence during the actual exam.

Frequently Asked Questions

Why focus on Semiconductors PYQs?

Analyzing PYQs for this specific chapter reveals the most frequently tested concepts and the typical complexity of questions, allowing you to tailor your study plan efficiently.

How to best use this analysis?

Review the topic breakdown to see which sub-topics within Semiconductors carry the most weight. Then, tackle the questions iteratively to solidify your understanding.